IRFZ44N N-channel enhancement mode MOSFET TO-220

SKU: IRFZ44N

22.00

Specification Value
Package TO-220-3
Transistor Polarity N
Maximum Drain Source Voltage 55 V
Maximum Continuous Drain Current 49 A
Category:

About: IRFZ44N N-channel enhancement mode MOSFET TO-220

The IRFZ44N is a robust and high-efficiency N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) housed in a TO-220 package. Known for its high current handling capability and low on-resistance, this MOSFET is a popular choice for various power electronics applications, including switching and amplification. The IRFZ44N’s design optimizes performance in terms of efficiency and reliability, making it suitable for both industrial and consumer applications.

Specifications:

Parameter Value
Part Number IRFZ44N
Package Type TO-220
Channel Type N-Channel
Drain-Source Voltage (Vds) 55V
Continuous Drain Current (Id) 49A at 25°C
Pulsed Drain Current (Id, pulse) 160A
Gate Threshold Voltage (Vgs(th)) 2.0V – 4.0V
Power Dissipation (Pd) 94W
Rds(on) (at Vgs = 10V) < 0.028Ω
Total Gate Charge (Qg) 67nC
Input Capacitance (Ciss) 1700pF
Rise Time (tr) 60ns
Fall Time (tf) 45ns
Operating Temperature Range -55°C to 175°C
Mounting Type Through Hole

Features:

  1. High Current Handling: With a continuous drain current of 49A and a pulsed current capability of up to 160A, the IRFZ44N can manage substantial power loads, making it ideal for demanding applications.
  2. Low On-Resistance: The MOSFET’s Rds(on) of less than 0.028Ω ensures minimal power loss during operation, enhancing overall system efficiency.
  3. Fast Switching: The IRFZ44N exhibits rapid switching characteristics with rise and fall times of 60ns and 45ns respectively, which is crucial for high-speed applications.
  4. Thermal Stability: It can operate over a wide temperature range from -55°C to 175°C, ensuring reliable performance in various environmental conditions.
  5. Ease of Use: The TO-220 package allows for easy mounting and efficient heat dissipation, which simplifies the design process for engineers.

Applications:

  1. Power Supply Circuits: Ideal for use in switching power supplies where efficient power conversion and regulation are essential.
  2. Motor Controllers: Suitable for DC motor control circuits, providing efficient current management.
  3. Inverters: Used in inverter circuits for converting DC to AC power with minimal losses.
  4. Battery Management Systems: Enhances battery life and performance by efficiently managing charge and discharge cycles.
  5. Consumer Electronics: Widely used in the power management sections of various consumer electronic devices due to its efficiency and reliability.
  6. Automotive Systems: Employed in automotive applications for controlling various electronic components and ensuring stable power distribution.

Developments:

The IRFZ44N MOSFET has seen various enhancements over the years to improve performance metrics such as on-resistance, gate charge, and thermal stability. Continuous advancements in semiconductor fabrication technology have led to the development of MOSFETs with even lower Rds(on) and higher current handling capabilities. The evolution of materials and design techniques has also contributed to better heat dissipation and more compact packaging options, allowing for increased efficiency and miniaturization in electronic circuits.

Instruction for Use:

  1. Mounting: Ensure the MOSFET is properly mounted on a heatsink to manage heat dissipation effectively, especially in high-current applications.
  2. Gate Drive: Provide an appropriate gate drive voltage. Typically, a Vgs of 10V is used to fully turn on the IRFZ44N. Ensure the gate drive circuitry can supply sufficient current to charge the gate capacitance quickly.
  3. Protection: Implement appropriate protection mechanisms such as clamping diodes and snubber circuits to protect the MOSFET from voltage spikes and transients.
  4. Thermal Management: Monitor the junction temperature and ensure it remains within the specified operating range to avoid thermal runaway conditions. Utilize thermal pads or compound to enhance heat transfer to the heatsink.
  5. Circuit Design: Carefully design the circuit layout to minimize parasitic inductance and resistance, which can affect switching performance and efficiency.
  6. Handling: Handle the MOSFET with care to avoid electrostatic discharge (ESD) damage. Use ESD protection measures such as wrist straps and antistatic mats when handling and soldering the component.

In summary, the IRFZ44N N-channel enhancement-mode MOSFET in a TO-220 package is a versatile and high-performance component suitable for a wide range of applications. Its high current capacity, low on-resistance, and fast switching characteristics make it an ideal choice for power electronics, motor control, inverters, and more. Proper usage and handling, combined with robust circuit design, will ensure optimal performance and longevity of the IRFZ44N in your applications.

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