2N7002P 60V 300mA N-Channel MOSFET

SKU: T2N7002P

4.56

Feature Specification
Drain-Source Voltage (Vds) 60V
Continuous Drain Current (Id) 300mA
Channel Type N-Channel
Package Type SOT-23
On Resistance (Typical) < 3Ω
Gate Threshold Voltage (Vgs(th)) 1V – 2.5V
Operating Temperature Range -55°C to 150°C
Category:

An Overview: 2N7002P 60V 300mA N-Channel MOSFET

The 2N7002P is a small signal N-channel MOSFET designed for switching and amplification applications. This MOSFET is housed in the compact SOT-23 surface-mount package, making it ideal for applications requiring space efficiency. With a maximum drain-source voltage of 60V and a continuous drain current of 300mA, the 2N7002P is suitable for a wide range of low-power applications.

Specifications:

Parameter Value
Part Number 2N7002P
Package Type SOT-23
Channel Type N-Channel
Drain-Source Voltage (Vds) 60V
Continuous Drain Current (Id) 300mA
Pulsed Drain Current (Id, pulse) 1.2A
Gate-Source Voltage (Vgs) ±20V
Power Dissipation (Pd) 350mW
Rds(on) (at Vgs = 10V) < 1.8Ω
Rds(on) (at Vgs = 4.5V) < 3Ω
Gate Threshold Voltage (Vgs(th)) 1V – 2.5V
Total Gate Charge (Qg) 2nC
Input Capacitance (Ciss) 60pF
Rise Time (tr) 20ns
Fall Time (tf) 10ns
Operating Temperature Range -55°C to 150°C
Mounting Type Surface Mount

Features:

  1. High Voltage Tolerance: Can withstand drain-source voltages up to 60V, suitable for moderate voltage applications.
  2. Moderate Current Handling: Supports continuous drain current up to 300mA, making it ideal for low-power circuits.
  3. Low On-Resistance: Offers low Rds(on) values of <1.8Ω at Vgs = 10V and <3Ω at Vgs = 4.5V, ensuring efficient current conduction.
  4. Fast Switching Speed: Features a rise time of 20ns and fall time of 10ns, suitable for high-speed switching applications.
  5. Compact Package: Housed in a SOT-23 package, which is ideal for space-constrained applications and surface-mount assembly.
  6. Thermal Stability: Operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance under varying environmental conditions.
  7. Ease of Use: The SOT-23 package facilitates easy mounting and integration into printed circuit boards (PCBs).

Applications:

  1. Switching Circuits: Ideal for use in switching applications in digital and analog circuits, including power management and load switching.
  2. Signal Amplification: Suitable for small signal amplification applications in various electronic circuits.
  3. Motor Control: Can be used to control small DC motors in consumer electronics and industrial applications.
  4. Battery Management: Used in battery-powered applications to manage charge and discharge cycles efficiently.
  5. Consumer Electronics: Commonly found in power management and control sections of various consumer electronic devices.
  6. Automotive Systems: Utilized in automotive electronics for controlling various components and systems.
  7. Industrial Electronics: Suitable for various industrial applications requiring reliable switching and amplification.

Developments:

The 2N7002P MOSFET benefits from continuous advancements in semiconductor manufacturing technology, resulting in improved electrical performance, reduced on-resistance, and enhanced switching speed. These developments contribute to greater efficiency and reliability, making the 2N7002P a versatile component in modern electronic designs.

Instruction for Use:

  1. Circuit Design: Ensure the MOSFET is used within its specified voltage and current limits to avoid damage. Design the circuit to provide appropriate gate drive voltage for optimal operation.
  2. Mounting: As an SMD component, the 2N7002P should be mounted using reflow soldering techniques. Ensure correct orientation of the drain, source, and gate terminals on the PCB.
  3. Heat Management: Although the 2N7002P has a moderate power dissipation capacity, consider heat sinks or adequate ventilation if used in high-temperature environments or prolonged operation.
  4. Gate Drive: Apply an appropriate gate drive voltage, typically Vgs of 10V, to fully enhance the MOSFET. Ensure the gate drive circuitry can handle the required gate charge.
  5. Protection: Implement protection mechanisms such as clamping diodes, snubber circuits, and overcurrent protection to safeguard the MOSFET from voltage spikes and transients.
  6. Testing: After assembly, test the circuit to ensure the MOSFET operates as expected. Check for correct voltage levels at the drain, source, and gate terminals.

In summary, the 2N7002P N-channel MOSFET in a SOT-23 package is a versatile, reliable component ideal for a wide range of low-power electronic applications. Its high voltage and current handling capabilities, combined with ease of use and compact size, make it a valuable addition to any engineer’s toolkit for switching, amplification, and signal processing purposes. Proper usage and handling will ensure optimal performance and longevity of the 2N7002P in your electronic projects.

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